document number: 93177 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 1 fast recovery diodes (hockey puk version), 560 a sd553c..s50l series vishay high power products features ? high power fast recovery diode series ? 6.0 s recovery time ? high voltage ratings up to 4500 v ? high current capability ? optimized turn-on and turn-off characteristics ? low forward recovery ? fast and soft reverse recovery ? press puk encapsulation ? case style conform to jedec do-200ab (b-puk) ? maximum junction temperature 125 c ? lead (pb)-free typical applications ? snubber diode for gto ? high voltage freewheeling diode ? fast recovery rectifier applications electrical specifications product summary i f(av) 560 a do-200ab (b-puk) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 560 a t hs 55 c i f(rms) 1120 a t hs 25 c i fsm 50 hz 12 000 a 60 hz 12 570 i 2 t 50 hz 721 ka 2 s 60 hz 658 v rrm range 3000 to 4500 v t rr 6.0 s t j 125 c t j - 40 to 125 voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 125 c ma sd553c..s50l 30 3000 3100 75 36 3600 3700 40 4000 4100 45 4500 4600
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93177 2 revision: 14-may-08 sd553c..s50l series vishay high power products fast recovery diodes (hockey puk version), 560 a forward conduction parameter symbol test conditions values units maximum average forward current at heatsink temperature i f(av) 180 conduction, half sine wave double side (single side) cooled 560 (210) a 55 (85) c maximum rms forward current i f(rms) 25 c heatsink temperature double side cooled 1120 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 12 000 t = 8.3 ms 12 570 t = 10 ms 50 % v rrm reapplied 10 100 t = 8.3 ms 10 570 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 721 ka 2 s t = 8.3 ms 658 t = 10 ms 50 % v rrm reapplied 510 t = 8.3 ms 466 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 7210 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 1.77 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 1.95 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.98 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.89 maximum forward voltage drop v fm i pk = 1500 a, t j =125 c, t p = 10 ms sinusoidal wave 3.24 v recovery characteristics code maximum value at t j = 25 c test conditions typical values at t j = 125 c t rr at 25 % i rrm (s) i pk square pulse (a) di/dt (a/s) v r (v) t rr at 25 % i rrm (s) q rr (c) i rr (a) s50 5.0 1000 100 - 50 6.0 900 250 thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to heatsink r thj-hs dc operation single side cooled 0.073 k/w dc operation double side cooled 0.031 mounting force, 10 % 14 700 (1500) n (kg) approximate weight 255 g case style conforms to jedec do-200ab (b-puk) i fm t rr dir dt i rm(rec) q rr t
document number: 93177 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 3 sd553c..s50l series fast recovery diodes (hockey puk version), 560 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.009 0.009 0.006 0.006 t j = t j maximum k/w 120 0.011 0.011 0.011 0.011 90 0.014 0.014 0.015 0.015 60 0.020 0.020 0.021 0.021 30 0.036 0.036 0.036 0.036 30 40 50 60 70 80 90 100 110 120 130 0100200300400 30 60 90 120 180 average forward current (a) maxim um allowable heatsink temperature (c) cond uction angle sd 55 3c ..s50 l se rie s (sin gle side c oo led) r (d c ) = 0.073 k/w th j- hs 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 20 0 30 0 40 0 500 6 00 30 60 90 180 dc 120 average forward current (a) maxim um allowable heatsink temperature (c) conduction period sd 553c ..s50l series (single side c oo le d) r ( d c) = 0.0 73 k/w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 30 60 90 120 180 average forward current (a) maximum allowable heatsink temperature ( c) conduction angle sd553c..s50l series (d ouble side cooled ) r (d c ) = 0.031 k/w thj-hs 10 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 30 60 90 180 dc 120 average forw ard current (a) maximum allowable heatsink temperature (c) conduction period sd 553c..s50l series (double side cooled) r (d c ) = 0.031 k /w thj-h s
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93177 4 revision: 14-may-08 sd553c..s50l series vishay high power products fast recovery diodes (hockey puk version), 560 a fig. 5 - forward power loss characteristics fig. 6 - forward power loss characteristics fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - forward voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristic 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 100 200 300 400 500 600 700 800 180 120 90 60 30 averag e forw ard current (a) maximum average forward power loss (w) rms limit conduction an gle sd553c..s50l series t = 125c j 0 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 dc 180 120 90 60 30 average forward current (a) rm s limit maximum average forward power loss (w) conduction period sd553c..s50l series t = 125c j 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 0 0 1 0 1 1 number of equa l amp litude ha lf cycle current pulses (n) p e a k h a lf s in e w a v e f o rw a rd c u rr e n t ( a ) sd 553c ..s50l se rie s in itia l t = 1 25 c @ 60 hz 0 .0 083 s @ 50 hz 0 .0 100 s at any rated load condition and with 50% rated v applie d fo llow ing surg e rrm j 200 0 400 0 600 0 800 0 10000 12000 14000 1 1 . 0 1 0 . 0 pulse train duration (s) maximum non repetitive surge current peak half sine w ave forward current (a) sd553c..s50l series in itial t = 125c no voltage reapplied 50% rated v reapplied versus p ulse tra in d uration. rrm j 100 1000 10000 1.522.533.544.55 t = 25c j instantaneous forward voltage (v) in stan taneous forward current (a) t = 125c j sd553c..s50l series 0.001 0.01 0.1 0.00 1 0 .0 1 0 .1 1 1 0 10 0 sq ua re w a ve p ulse d ura tio n (s) thj-hs transien t therm al im pedan ce z (k/w ) ste a d y s ta te v a lue r = 0.073 k/w (single side c o ole d) r = 0.031 k/w (double side cooled) (d c ope ratio n) thj-hs thj- hs sd 553 c..s50 l s erie s
document number: 93177 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 5 sd553c..s50l series fast recovery diodes (hockey puk version), 560 a vishay high power products fig. 11 - typical forward recovery characteristics fig. 12 - recovery time characteristics fig. 13 - recovery charge characteristics fig. 14 - recovery current characteristics fig. 15 - maximum total energy loss per pulse characteristics 0 50 100 150 200 250 300 350 400 0 200 400 600 800 1000 1200 1400 1600 1800 2000 forward recovery (v) t = 125c t = 25c j j sd 553c..s50l series rate of rise of forward current - di/dt (a/us) i v fp 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 10 100 1000 rate of fall of forward current - di/dt (a/s) maximum reverse recovery time - trr (s) 500 a i = 15 00 a sine pulse 1000 a sd 553 c ..s50l se rie s t = 125 c; v > 100v j fm r 0 500 100 0 150 0 200 0 250 0 0 50 100 150 200 250 300 rate of fall o f forward current - di/dt (a/s) sd 553c ..s50l series t = 1 2 5 c ; v > 1 0 0 v i = 15 00 a sine p ulse fm 1000 a 500 a j r ma x im um re ve rse reco ve ry c h a rg e - q rr ( c ) 0 100 200 300 400 500 600 700 800 0 5 0 1 00 1 50 2 00 25 0 30 0 i = 1500 a sine pulse fm 1000 a 500 a rate of fall o f forwa rd current - di/dt (a/s) m ax im um rev erse rec ov ery cu rrent - irr (a ) sd 5 5 3 c .. s5 0 l s e r ie s t = 1 2 5 c ; v > 1 0 0 v j r 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pulse basewidth (s) peak forward current (a) 10 joules per pulse 6 4 sinu soid al pu lse sd553c..s50l series 0.8 0.6 0.4 0.2 t = 1 25 c , v = 1500v j rrm dv/dt = 1000v/s tp
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93177 6 revision: 14-may-08 sd553c..s50l series vishay high power products fast recovery diodes (hockey puk version), 560 a fig. 16 - frequency characteristics fig. 17 - maximum total energy loss per pulse characteristics fig. 18 - frequency characteristics fig. 19 - maximum total energy loss per pulse characteristics fig. 20 - frequency characteristics 1e 2 1e 3 1e 4 1e1 1e2 1e3 1e4 pulse basewidth (s) 50 hz 200 10000 100 4000 dv/dt = 1000v/us 400 1000 2000 6000 peak forward current (a) sinu soid al pu ls e s d55 3c..s50l series 3000 1500 t = 55c , v = 1500v c rr m tp 600 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pulse basewidth (s) peak forw ard current (a) 10 jo ules pe r p ulse 6 4 dv/dt = 1000v/s t = 125c, v = 1500v j rrm sin uso id al pu ls e 0.8 0.6 0.4 8 sd553c.. s50l series tp 1e2 1e3 1e4 1e 1 1e 2 1e 3 1e4 pulse basewidth (s) trap e zo idal pul se 50 h z 100 200 400 100 0 1500 2000 400 0 3000 600 t = 5 5c, v = 1500v rrm 6000 peak forward current (a) sd 55 3c ..s5 0 l s er ie s dv/dt = 10 00v/us, di/dt = 300a/us c tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 1 2 pulse basewidth (s) 4 10 jou le s pe r pulse 6 tra pez o idal pul se peak forward current (a) t = 125c, v = 1500v j rrm dv/d t = 100 0v/s di/d t = 100a/s 0.8 0.6 sd553c..s50l series tp 8 0.4 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pulse basewidth (s) tra pe zo ida l pu lse 50 h z 100 200 400 1000 150 0 2000 4000 3000 600 t = 55c, v = 1500v rrm 6000 peak forward current (a) sd553c..s50l series dv/dt = 1000v/us, di/dt = 100a/us c tp
document number: 93177 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 14-may-08 7 sd553c..s50l series fast recovery diodes (hockey puk version), 560 a vishay high power products ordering information table 1 - diode 2 - essential part number 3 - 3 = fast recovery 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 -t rr code 7 - l = puk case do-200ab (b-puk) device code 5 13 24 67 sd 55 3 c 45 s50 l links to related documents dimensions http://www.vishay.com/doc?95246
document number: 95246 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 05-nov-07 1 do-200ab (b-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 58.5 (2.30) dia. max. 53 (2.09) dia. max. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specifications) 3.5 (0.14) dia. nom. x 1.8 (0.07) deep min. both ends 0.8 (0.03) both ends 34 (1.34) dia. max. 2 places 26.9 (1.06) 25.4 (1)
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